CuIn7Se11

簡要描述：Ternary copper indium selenide crystallizes in CuIn7Se11 stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction

更新時間：2024-06-03
產(chǎn)品型號：
廠商性質(zhì)：生產(chǎn)廠家
訪問量：771

產(chǎn)品咨詢聯(lián)系我們

產(chǎn)品分類

二維材料

鈣鈦礦/OLED 異質(zhì)結(jié) MOFS材料其他二維材料二維材料溶液二維材料薄膜二維材料粉末絕緣體黑磷六方氮化硼晶體碲化物晶體硒化物晶體硫化物晶體查看全部產(chǎn)品

相關(guān)文章

詳細(xì)介紹

Ternary copper indium selenide crystallizes in CuIn7Se11 stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strength. Because of its high photoresponsivity and wide spectral response range, layered CuIn7Se11 has been utilized in electronics, photodetectors, catalysis, and energy conversion technologies. Our materials have been synthesized using Bridgman growth technique using Cu2Se, In2Se3, and Se precursors. Each precursors are selected at 5.5N (99.9995%) purity to realize highest grade and single phase CuIn7Se11 crystals. Typical growth process takes 3-5 weeks and each synthesis method only produces ~3-4mm sized crystals.

Advantages

Pure single phase without any InSe, In2Se3, or CuSe phase formation
Large single domain size (single crystal)
Bridgman grown which means no halides (I, Br, Cl, or other agents) are present in the crystal matrix.
High purity 99.9995% or higher.